No. |
Part Name |
Description |
Manufacturer |
151 |
MRF186_D |
MRF186 1 GHz, 120 W, 28 V Lateral N-Channel Broadband RF Power MOSFET |
Motorola |
152 |
MRF19085 |
MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
153 |
MRF21085 |
MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
154 |
MRF5S19100L |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
155 |
MRF5S19130 |
MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
156 |
MRF5S21100H |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
157 |
MRF9080 |
MRF9080, MRF9080R3, MRF9080SR3, MRF9080LSR3 GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs |
Motorola |
158 |
MRF9085 |
MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
159 |
MRF9130L |
MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
160 |
MTB15N06V |
15 A D2PAK N-Channel MOSFET, VDSS 60 |
ON Semiconductor |
161 |
MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
162 |
MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
163 |
NE021 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
164 |
NE02100 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
165 |
NE02107 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
166 |
NE02107B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
167 |
NE02133-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
168 |
NE02135 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
169 |
NE02139-T1 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
170 |
NTD6600N |
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK |
ON Semiconductor |
171 |
P1819A-08SR |
3.3 V, 20 MHz to 40 MHz, notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
172 |
P1819A-08ST |
3.3 V, 20 MHz to 40 MHz, notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
173 |
P1819A-08TR |
3.3 V, 20 MHz to 40 MHz, notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
174 |
P1819A-08TT |
3.3 V, 20 MHz to 40 MHz, notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
175 |
SB23YR80BCARMYIB |
ST23 Dual Interface Secure MCU with 80 KBytes of EEPROM, enhanced security and Nescrypt cryptoprocessor, RF Type B (Contactless High end ID-Passport/PKI) |
ST Microelectronics |
176 |
SD1100CHP |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
177 |
SD1100DD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
178 |
SD1100HD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
179 |
SD1101BD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
180 |
SD1101CHP |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
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