| No. |
Part Name |
Description |
Manufacturer |
| 151 |
10ELS6 |
HIGH SURGE CAPABILITY 100VOLTS TROUGH 600VOLTS TYPE AVAILABLE |
Nihon |
| 152 |
10PM1 |
10A Single Phase Rectifier Bridge 100V |
IPRS Baneasa |
| 153 |
10RIF100W |
V(rrm): 1000V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 154 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
| 155 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
| 156 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
| 157 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
| 158 |
11DQ10 |
Diode Schottky 100V 1.1A 2-Pin DO-204AL Box |
New Jersey Semiconductor |
| 159 |
12 and 20 mm High Power Ceramic Filters |
12 and 20 mm High Power Ceramic Filters up to 100 W Continuous Wave (CW) |
Skyworks Solutions |
| 160 |
120LQ100 |
120A 100V Hi-Rel Schottky Discrete Diode in a SMD-1 package |
International Rectifier |
| 161 |
120LQ100SCS |
120A 100V Hi-Rel Schottky Discrete Diode in a SMD-1 package |
International Rectifier |
| 162 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 163 |
12NC11 |
Silicon diffused junction rectifier 1000V 12A |
TOSHIBA |
| 164 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
| 165 |
13PD100-F |
The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. |
Anadigics Inc |
| 166 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 167 |
13PD100-TO |
The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... |
Anadigics Inc |
| 168 |
1503-100A |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 169 |
1503-100B |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 170 |
1503-100C |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 171 |
1504-1000G |
Delay 1000 +/-50 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 172 |
1504-100A |
Delay 100 +/-5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 173 |
1504-100B |
Delay 100 +/-5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 174 |
1504-100C |
Delay 100 +/-5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 175 |
1504-100D |
Delay 100 +/-5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 176 |
1504-100G |
Delay 100 +/-5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 177 |
1505-100A |
Delay 100 +/-5 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 178 |
1505-100B |
Delay 100 +/-5 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 179 |
1505-100G |
Delay 100 +/-5 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 180 |
1507-100A |
Delay 100 +/-5 ns, 10-TAP SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
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