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Datasheets for 20

Datasheets found :: 37715
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No. Part Name Description Manufacturer
151 15KP130CA Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. Panjit International Inc
152 15KP190 Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. Panjit International Inc
153 15KP190A Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. Panjit International Inc
154 15KP190C Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. Panjit International Inc
155 15KP190CA Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. Panjit International Inc
156 15KP20 Diode TVS Single Uni-Dir 20V 15KW 2-Pin Case P600 New Jersey Semiconductor
157 15KP200 Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case 5A New Jersey Semiconductor
158 15KP200 Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. Panjit International Inc
159 15KP200A Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case 5A New Jersey Semiconductor
160 15KP200A Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. Panjit International Inc
161 15KP200C Diode TVS Single Bi-Dir 200V 15KW 2-Pin Case 5A New Jersey Semiconductor
162 15KP200C Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. Panjit International Inc
163 15KP200CA Diode TVS Single Bi-Dir 200V 15KW 2-Pin Case 5A New Jersey Semiconductor
164 15KP200CA Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. Panjit International Inc
165 15KP20A Diode TVS Single Uni-Dir 20V 15KW 2-Pin Case P600 New Jersey Semiconductor
166 15KP20C Diode TVS Single Bi-Dir 20V 15KW 2-Pin Case 5A New Jersey Semiconductor
167 15KP20CA Diode TVS Single Bi-Dir 20V 15KW 2-Pin Case 5A New Jersey Semiconductor
168 15KPA20 Diode TVS Single Uni-Dir 20V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
169 15KPA200 Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
170 15KPA200A Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
171 15KPA200C Diode TVS Single Bi-Dir 200V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
172 15KPA200CA Diode TVS Single Bi-Dir 200V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
173 15KPA20A Diode TVS Single Uni-Dir 20V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
174 15KPA20C Diode TVS Single Bi-Dir 20V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
175 15KPA20CA Diode TVS Single Bi-Dir 20V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
176 15SMC68A UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS Central Semiconductor
177 15SMC68CA BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS Central Semiconductor
178 1720-20 1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications SGS Thomson Microelectronics
179 1837 2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit SGS Thomson Microelectronics
180 1838 2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit SGS Thomson Microelectronics


Datasheets found :: 37715
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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