| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5934C |
Diode Zener Single 24V 2% 1.5W 2-Pin DO-41 |
New Jersey Semiconductor |
| 152 |
1N5934D |
Diode Zener Single 24V 1% 1.5W 2-Pin DO-41 |
New Jersey Semiconductor |
| 153 |
1N6009 |
Diode Zener Single 24V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 154 |
1N6009A |
Diode Zener Single 24V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 155 |
1N6009B |
Diode Zener Single 24V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 156 |
1N6009C |
Diode Zener Single 24V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 157 |
1N6009D |
Diode Zener Single 24V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 158 |
1N6050 |
Diode TVS Single Bi-Dir 24V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 159 |
1N6280A |
Zener 24V 1500W 5% |
ON Semiconductor |
| 160 |
1N6280ARL4 |
Zener 24V 1500W 5% |
ON Semiconductor |
| 161 |
1N6333 |
Diode Zener Single 24V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 162 |
1N970 |
Diode Zener Single 24V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 163 |
1N970A |
Diode Zener Single 24V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 164 |
1N970B |
Diode Zener Single 24V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 165 |
1N970C |
Diode Zener Single 24V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 166 |
1N970D |
Diode Zener Single 24V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 167 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 168 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 169 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 170 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 171 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 172 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 173 |
2SC3139 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080120-28 is also the datasheet of 2SC3139, see the Electrical Characteristics table) |
NEC |
| 174 |
2SC3140 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080220-28 is also the datasheet of 2SC3140, see the Electrical Characteristics table) |
NEC |
| 175 |
2SC3141 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080525-28 is also the datasheet of 2SC3141, see the Electrical Characteristics table) |
NEC |
| 176 |
3EZ24D5 |
Diode Zener Single 24V 5% 3W 2-Pin DO-41 |
New Jersey Semiconductor |
| 177 |
3EZ24D5 |
Zener 24V 3W 5% |
ON Semiconductor |
| 178 |
3EZ24D5RL |
Zener 24V 3W 5% |
ON Semiconductor |
| 179 |
5KP24 |
Diode TVS Single Uni-Dir 24V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 180 |
5KP24A |
Diode TVS Single Uni-Dir 24V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
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