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Datasheets for 25

Datasheets found :: 32603
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No. Part Name Description Manufacturer
151 1513-25A Delay 25 +/-1.3 ns, fixed SIP delay line Td/Tr=5 Data Delay Devices Inc
152 1514-25A Delay 25 +/-1.3 ns, fixed SIP delay line Td/Tr=5 Data Delay Devices Inc
153 15KP160A Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. Panjit International Inc
154 15KP160CA Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. Panjit International Inc
155 1600EXD22 Silicon alloy-diffused junction rectifier 2500V 1600A TOSHIBA
156 1617AB35 35 W, 25 V, 1600-1700 MHz common emitter transistor GHz Technology
157 1720-25 1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications SGS Thomson Microelectronics
158 1819AB12 12 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
159 1819AB25 25 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
160 1819AB35 35 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
161 1819AB4 4 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
162 1920A12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
163 1920A20 20 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
164 1920AB12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
165 1920AB25 25 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
166 1920AB35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
167 1920AB4 4 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
168 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
169 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
170 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
171 1N100A 100 V, 250 mA, gold bonded germanium diode BKC International Electronics
172 1N1202C Diode 200V 25A 2-Pin DO-4 New Jersey Semiconductor
173 1N2022 Diode 250V 40A 2-Pin DO-5 New Jersey Semiconductor
174 1N2054 50V 250A Std. Recovery Diode in a DO-205AB (DO-9)package International Rectifier
175 1N2055 100V 250A Std. Recovery Diode in a DO-205AB (DO-9)package International Rectifier
176 1N2055R 100V 250A Std. Recovery Diode in a DO-205AB (DO-9)package International Rectifier
177 1N2057 200V 250A Std. Recovery Diode in a DO-205AB (DO-9)package International Rectifier
178 1N2059 300V 250A Std. Recovery Diode in a DO-205AB (DO-9)package International Rectifier
179 1N2061 400V 250A Std. Recovery Diode in a DO-205AB (DO-9)package International Rectifier
180 1N2064 600V 250A Std. Recovery Diode in a DO-205AB (DO-9)package International Rectifier


Datasheets found :: 32603
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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