| No. |
Part Name |
Description |
Manufacturer |
| 151 |
ADS61B49 |
Buffered input, low power, 14-bit, 250 MSPS ADC |
Texas Instruments |
| 152 |
ADS61B49IRGZR |
Buffered input, low power, 14-bit, 250 MSPS ADC 48-VQFN -40 to 85 |
Texas Instruments |
| 153 |
ADS61B49IRGZT |
Buffered input, low power, 14-bit, 250 MSPS ADC 48-VQFN -40 to 85 |
Texas Instruments |
| 154 |
ADS62P19 |
Dual Channel 11-Bit, 250 MSPS ADC With DDR LVDS and Parallel CMOS Output |
Texas Instruments |
| 155 |
ADS62P19IRGCR |
Dual Channel 11-Bit, 250 MSPS ADC With DDR LVDS and Parallel CMOS Output 64-VQFN -40 to 85 |
Texas Instruments |
| 156 |
ADS62P19IRGCT |
Dual Channel 11-Bit, 250 MSPS ADC With DDR LVDS and Parallel CMOS Output 64-VQFN -40 to 85 |
Texas Instruments |
| 157 |
ADS62P29 |
Dual Channel 12 Bit, 250 MSPS ADC with DDR LVDS & Parallel CMOS outputs |
Texas Instruments |
| 158 |
ADS62P29IRGCR |
Dual Channel 12 Bit, 250 MSPS ADC with DDR LVDS & Parallel CMOS outputs 64-VQFN -40 to 85 |
Texas Instruments |
| 159 |
ADS62P29IRGCT |
Dual Channel 12 Bit, 250 MSPS ADC with DDR LVDS & Parallel CMOS outputs 64-VQFN -40 to 85 |
Texas Instruments |
| 160 |
ADS62P49 |
Dual Channel 14 Bit, 250 MSPS ADC with DDR LVDS & Parallel CMOS outputs |
Texas Instruments |
| 161 |
ADS62P49IRGCR |
Dual Channel 14 Bit, 250 MSPS ADC with DDR LVDS & Parallel CMOS outputs 64-VQFN -40 to 85 |
Texas Instruments |
| 162 |
ADS62P49IRGCT |
Dual Channel 14 Bit, 250 MSPS ADC with DDR LVDS & Parallel CMOS outputs 64-VQFN -40 to 85 |
Texas Instruments |
| 163 |
AFE7225 |
Dual 12-Bit, 125 MSPS ADC with dual 12-Bit, 250 MSPS DAC and auxilliary ADC and DACs |
Texas Instruments |
| 164 |
AFE7225IRGCR |
Dual 12-Bit, 125 MSPS ADC with dual 12-Bit, 250 MSPS DAC and auxilliary ADC and DACs 64-VQFN -40 to 85 |
Texas Instruments |
| 165 |
AFE7225IRGCT |
Dual 12-Bit, 125 MSPS ADC with dual 12-Bit, 250 MSPS DAC and auxilliary ADC and DACs 64-VQFN -40 to 85 |
Texas Instruments |
| 166 |
AM-119PIN |
High Performance Amplifier, 8 dB Gain, 30 - 250 MHz |
Tyco Electronics |
| 167 |
AM-AMC-119 |
High Performance Amplifier, 8 dB Gain, 30 - 250 MHz |
Tyco Electronics |
| 168 |
AM55-0004 |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
| 169 |
AM55-0004RTR |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
| 170 |
AM55-0004SMB |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
| 171 |
AM55-0004TR |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
| 172 |
AMC-119SMA |
High Performance Amplifier, 8 dB Gain, 30 - 250 MHz |
Tyco Electronics |
| 173 |
AQV257M |
PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Through hole terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 174 |
AQV257MA |
PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 175 |
AQV257MAX |
PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 176 |
AQV257MAZ |
PhotoMOS relay, HE (high-function economy) type [1-channel (form A) type] - soft ON/OFF operation. Output rating: load voltage 200 V, load current 250 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 177 |
AQY221R2SX |
PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. |
Matsushita Electric Works(Nais) |
| 178 |
AQY221R2SZ |
PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. |
Matsushita Electric Works(Nais) |
| 179 |
BAT46GW |
100 V, 250 mA Schottky barrier diode |
Nexperia |
| 180 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
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