No. |
Part Name |
Description |
Manufacturer |
151 |
28LV256TM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
152 |
28LV256TM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
153 |
5962-8992801XA |
256 X 24 Color Palette (RAMDAC) |
Texas Instruments |
154 |
5962-8992801XC |
256 X 24 Color Palette (RAMDAC) |
Texas Instruments |
155 |
5962-9952401QZC |
3.3V, ISR high-performance CPLDs, 256 macrocells, 66MHz |
Cypress |
156 |
5962R9676601QXC |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
157 |
5962R9676601QYC |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
158 |
5962R9676601VXC |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
159 |
5962R9676601VYC |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
160 |
5962R9676602QXC |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
161 |
5962R9676602QYC |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
162 |
5962R9676602VXC |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
163 |
5962R9676602VYC |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
164 |
8042AH |
Universal peripherial interface 8-bit slave microcontroller, 2K ROM, 256 RAM |
Intel |
165 |
81C55 |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
166 |
81C56 |
Radiation Hardened 256 x 8 CMOS RAM |
Intersil |
167 |
8242AH |
Universal peripherial interface 8-bit slave microcontroller, 2K ROM, 256 RAM |
Intel |
168 |
8742AH |
Universal peripherial interface 8-bit slave microcontroller, 2K OTP ROM, 256 RAM |
Intel |
169 |
87C652 |
80C51 8-bit microcontroller 8K/16K, 256 OTP, I2C |
Philips |
170 |
87C654 |
80C51 8-bit microcontroller 8K/16K, 256 OTP, I2C |
Philips |
171 |
93479ADC |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
172 |
93479ADMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
173 |
93479ALMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
174 |
93479DC |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
175 |
93479DMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
176 |
93479LMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
177 |
93C56 |
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM |
ST Microelectronics |
178 |
93L422ADC |
-0.5 V to +7 V, 256 x 4-bit static random access memory |
National Semiconductor |
179 |
93L422APC |
-0.5 V to +7 V, 256 x 4-bit static random access memory |
National Semiconductor |
180 |
AD5207 |
Dual, 256 Position, Digital Potentiometer |
Analog Devices |
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