| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SA634 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 152 |
2SA648 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 153 |
2SA649 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 154 |
2SA651 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 155 |
2SA652 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 156 |
2SA656 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 157 |
2SA657 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 158 |
2SA658 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 159 |
2SA663 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 160 |
2SA680 |
Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 161 |
2SA714 |
Trans GP BJT PNP 25V 0.5A 3-Pin TO-92-B1 |
New Jersey Semiconductor |
| 162 |
2SB564 |
Trans GP BJT PNP 25V 1A 3-Pin SP-8 |
New Jersey Semiconductor |
| 163 |
2SB632 |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 164 |
2SB632K |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 165 |
2SC1324 |
Trans GP BJT NPN 25V 0.15A 3-Pin Case T-8 |
New Jersey Semiconductor |
| 166 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 167 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
| 168 |
2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 |
Isahaya Electronics Corporation |
| 169 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 170 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 171 |
2SD1797 |
Trans Darlington NPN 25V 3A 3-Pin (3+Tab) TP |
New Jersey Semiconductor |
| 172 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 173 |
2SD612 |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 174 |
2SD612K |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
| 175 |
2SD894 |
NPN Epitaxial Planar Silicon Transistor 25V/1.5A Driver Applications |
SANYO |
| 176 |
3N140 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
| 177 |
3N155 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
| 178 |
3N156 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
| 179 |
3N170 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
| 180 |
3N171 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
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