| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NTE5820 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. |
NTE Electronics |
| 152 |
NTE5821 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. |
NTE Electronics |
| 153 |
PM45502C |
V(dss): 450V; 300W; silicon N-channel power MOS FET module. For high speed power switching |
Hitachi Semiconductor |
| 154 |
RCA8766D |
10A N-P-N monolithic darlington power transistor. 450V, 150W. |
General Electric Solid State |
| 155 |
RCA8766E |
10A N-P-N monolithic darlington power transistor. 450V, 150W. |
General Electric Solid State |
| 156 |
RFH10N45 |
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 157 |
RFH10N50 |
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 158 |
RFM10N12 |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 159 |
RFM10N15 |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 160 |
RFM10N15L |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 161 |
RFM10N45 |
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 162 |
RFM10N50 |
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 163 |
RFM3N45 |
3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 164 |
RFM3N50 |
3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 165 |
RFM6N45 |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 166 |
RFP3N45 |
3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 167 |
RFP3N50 |
3A/ 450V and 500V/ 3 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 168 |
RFP6N45 |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 169 |
RFP6N50 |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 170 |
SFH 450V |
Transmitter for various POF applications |
Infineon |
| 171 |
SM30G12 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 30A 450V |
TOSHIBA |
| 172 |
STD2NC45 |
N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET |
ST Microelectronics |
| 173 |
STD2NC45-1 |
N-CHANNEL 450V 4.1OHM 1.5A IPAK/TO-92 SUPERMESH POWER MOSFET |
ST Microelectronics |
| 174 |
STD2NC45T4 |
N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET |
ST Microelectronics |
| 175 |
STQ1NC45 |
N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH��Power MOSFET |
ST Microelectronics |
| 176 |
STQ1NC45-AP |
N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH��Power MOSFET |
ST Microelectronics |
| 177 |
STQ1NC45R |
N-CHANNEL 450V 4.1OHM 1.5A IPAK/TO-92 SUPERMESH POWER MOSFET |
ST Microelectronics |
| 178 |
STQ1NC45R-AP |
N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET |
ST Microelectronics |
| 179 |
STR-F6513 |
SMPS primary IC, 450V, 190W |
Sanken |
| 180 |
STR-F6516 |
SMPS primary IC, 450V, 190W |
Sanken |
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