No. |
Part Name |
Description |
Manufacturer |
151 |
IS41C16256-60K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
152 |
IS41C16256-60KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
153 |
IS41C16256-60T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
154 |
IS41C16256-60TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
155 |
IS41LV16256-60K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
156 |
IS41LV16256-60KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
157 |
IS41LV16256-60T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
158 |
IS41LV16256-60TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
159 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
160 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
161 |
K4E640812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
162 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
163 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
164 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
165 |
K4E640812C-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
166 |
K4E640812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
167 |
K4E641612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
168 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
169 |
K4E660812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
170 |
K4E660812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
171 |
K4E660812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
172 |
K4E660812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
173 |
K4E660812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
174 |
K4E660812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
175 |
K4E660812C-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
176 |
K4E660812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
177 |
K4E661612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
178 |
K4E661612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
179 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
180 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
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