No. |
Part Name |
Description |
Manufacturer |
151 |
ASM3P2184A-08TR |
6 MHz to 70 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
152 |
ASM3P2184A-08TT |
6 MHz to 70 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
153 |
ATF1502ASL-25JC44 |
High performance EEPROM CPDL, 70 MHz |
Atmel |
154 |
ATF1502ASL-25JI44 |
High performance EEPROM CPDL, 70 MHz |
Atmel |
155 |
ATF1504ASZ-25JC44 |
High-performance EE CPLD, 70 MHz |
Atmel |
156 |
ATF1504ASZ-25JI44 |
High-performance EE CPLD, 70 MHz |
Atmel |
157 |
ATF1516ASL-25QI160 |
High performance EE-based CPDL, 70 MHz |
Atmel |
158 |
BAS70VV |
BAS70VV; 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 |
Philips |
159 |
BAS70VV |
BAS70VV; 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 |
Philips |
160 |
BAS70VV |
70 V, 70 mA Schottky barrier triple isolated diode in SOT666 |
Philips |
161 |
BC300-5 |
0.850W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
162 |
BC301-5 |
0.850W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
163 |
BC302-5 |
0.850W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
164 |
BC303-5 |
0.850W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.500A Ic, 70 - 140 hFE. |
Continental Device India Limited |
165 |
BD643 |
8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
166 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
167 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
168 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
169 |
BD895 |
8 A N-P-N darlington power transistor. 45 V. 70 W. |
General Electric Solid State |
170 |
BD895 |
45 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
171 |
BD895A |
8 A N-P-N darlington power transistor. 45 V. 70 W. |
General Electric Solid State |
172 |
BD895A |
45 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
173 |
BD896 |
45 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
174 |
BD896A |
45 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
175 |
BD897 |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
176 |
BD897 |
60 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
177 |
BD897A |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
178 |
BD897A |
60 V, 8 A, 70 W, NPN silicon power darlington |
Texas Instruments |
179 |
BD898 |
60 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
180 |
BD898A |
60 V, 8 A, 70 W, P-N-P silicon power darlington |
Texas Instruments |
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