| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 152 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 153 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 154 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 155 |
2N3043 |
DUAL AMPLIFIER TRANSISTOR |
Motorola |
| 156 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 157 |
2N3044 |
DUAL AMPLIFIER TRANSISTOR |
Motorola |
| 158 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 159 |
2N3045 |
DUAL AMPLIFIER TRANSISTOR |
Motorola |
| 160 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 161 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 162 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 163 |
2N3048 |
DUAL AMPLIFIER TRANSISTOR |
Motorola |
| 164 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 165 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 166 |
2N3053 |
NPN Silicon Switching and amplifier Transistor |
ITT Semiconductors |
| 167 |
2N3054 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 168 |
2N3055 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 169 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 170 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 171 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 172 |
2N3107 |
NPN small signal general purpose amplifier & satureted switch. |
Fairchild Semiconductor |
| 173 |
2N3108 |
NPN small signal general purpose amplifier & satureted switch. |
Fairchild Semiconductor |
| 174 |
2N3109 |
NPN small signal general purpose amplifier & satureted switch. |
Fairchild Semiconductor |
| 175 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 176 |
2N3117 |
Low level amplifier transistor |
SGS-ATES |
| 177 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 178 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 179 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 180 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
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