| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SA970 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
| 152 |
2SB1015 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
| 153 |
2SB1015A |
Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 154 |
2SB1252 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 155 |
2SB1254 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 156 |
2SB1255 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 157 |
2SB1317 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 158 |
2SB1347 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 159 |
2SB1361 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 160 |
2SB1371 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 161 |
2SB1375 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 162 |
2SB1475 |
PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER |
NEC |
| 163 |
2SB1490 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 164 |
2SB1503 |
Power Device - Power Transistors - For Audio |
Panasonic |
| 165 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 166 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 167 |
2SB1640 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 168 |
2SB1642 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 169 |
2SB1667(SM) |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 170 |
2SB189 |
Germanium PNP alloy junction transistor, audio medium power amplifier applications |
TOSHIBA |
| 171 |
2SB331H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 172 |
2SB332H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 173 |
2SB333H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 174 |
2SB334H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
| 175 |
2SB337 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 176 |
2SB337 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 177 |
2SB337H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 178 |
2SB338H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 179 |
2SB339H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
| 180 |
2SB340H |
Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output |
Hitachi Semiconductor |
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