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Datasheets for DIFFU

Datasheets found :: 4400
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 1S1943 Silicon diffused junction rectifier 0.5A 400V TOSHIBA
152 1S1944 Silicon diffused junction rectifier 0.5A 600V TOSHIBA
153 1S2233 Silicon diffused junction rectifier 1.5A 600V TOSHIBA
154 1S2234 Silicon diffused junction rectifier 1.5A 800V TOSHIBA
155 1S2235 Silicon diffused junction rectifier 1.5A 1000V TOSHIBA
156 1S2237B Silicon diffused junction high-voltage rectifier, 18kV TOSHIBA
157 1S2576 Silicon diffused junction rectifier 1A 100V TOSHIBA
158 1S2577 Silicon diffused junction rectifier 1A 200V TOSHIBA
159 1S2578 Silicon diffused junction rectifier 1A 400V TOSHIBA
160 1S2579 Silicon diffused junction rectifier 1A 600V TOSHIBA
161 1S2580 Silicon diffused junction rectifier 1A 800V TOSHIBA
162 1S2581 Silicon diffused junction rectifier 1A 1000V TOSHIBA
163 1S2582 Silicon diffused junction rectifier 3A 100V TOSHIBA
164 1S2583 Silicon diffused junction rectifier 3A 200V TOSHIBA
165 1S2584 Silicon diffused junction rectifier 3A 400V TOSHIBA
166 1S2585 Silicon diffused junction rectifier 3A 600V TOSHIBA
167 1S2586 Silicon diffused junction rectifier 3A 800V TOSHIBA
168 1S2615 Silicon diffused junction fast recovery rectifier TOSHIBA
169 1S2616 Silicon diffused junction fast recovery rectifier TOSHIBA
170 1S2617 Silicon diffused junction fast recovery rectifier TOSHIBA
171 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
172 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
173 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
174 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
175 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
176 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
177 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
178 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
179 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
180 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor


Datasheets found :: 4400
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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