| No. |
Part Name |
Description |
Manufacturer |
| 151 |
BAW101 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
| 152 |
BAW156 |
General Purpose Diodes - Silicon Low Leakage Diode Array |
Infineon |
| 153 |
BAW156 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 154 |
BAW56 |
Silicon Switching Diode Array with co... |
Infineon |
| 155 |
BAW56 |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 156 |
BAW56 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 157 |
BAW56S |
Silicon Switching Diode Array |
Infineon |
| 158 |
BAW56S |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 159 |
BAW56S |
High-speed double diode array |
Philips |
| 160 |
BAW56S |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 161 |
BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching |
Infineon |
| 162 |
BAW56W |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 163 |
BAW56W |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
| 164 |
BAW756DW |
100V; 300mA quad surface mount swithcing diode array. For general purpose switching applications |
Diodes |
| 165 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 166 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 167 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 168 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 169 |
BSM300GA120DN2E3166 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 170 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 171 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 172 |
C67070-A2007-A70 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 173 |
C67070-A2111-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 174 |
C67070-A2709-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 175 |
C67070-A2710-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 176 |
C67076-A2112-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 177 |
CA3039L |
Beam-Lead Diode Array, 6 matched ultra-fast low-capacitance diodes |
RCA Solid State |
| 178 |
CA3093E |
General-Purpose High-Current N-P-N Transistor-Zener Diode - Diode Array |
RCA Solid State |
| 179 |
CA3141 |
High-Voltage Diode Array For Commercial, Industrial and Military Applications |
Intersil |
| 180 |
CA3141E |
High-Voltage Diode Array For Commercial, Industrial and Military Applications |
Intersil |
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