| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2K0S-N024 |
Input voltage 200-260 VAC;output voltage 24 VDC;output current:83.5 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 152 |
2K0S-N024 |
1.2K-1.5K WATT 2K WATT ENCLOSED PARALLEL POWER SUPPLY |
Unknow |
| 153 |
2K0S-N048 |
Input voltage 200-260 VAC;output voltage 48 VDC;output current:42 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 154 |
2K0S-N048 |
1.2K-1.5K WATT 2K WATT ENCLOSED PARALLEL POWER SUPPLY |
Unknow |
| 155 |
2N2530N3 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 156 |
2N2530N8 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 157 |
2N322 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 158 |
2N323 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 159 |
2N324 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 160 |
2N4351 |
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
| 161 |
2N4351 |
N-channel enhancement mode MOSFET general purpose amplifier/switch. |
Intersil |
| 162 |
2N4351 |
N-Channel Enhancement Mode MOSFET |
Linear Systems |
| 163 |
2N4352 |
P-Channel Enhancement Mode MOSFET Amplifier/Switch |
Calogic |
| 164 |
2N4999 |
HIGH ENERCY NPN TRANSISTOR |
Solid State Devices Inc |
| 165 |
2N5001 |
HIGH ENERCY NPN TRANSISTOR |
Solid State Devices Inc |
| 166 |
2N508 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 167 |
2N5094 |
HIGH ENERCY NPN TRANSISTOR |
Solid State Devices Inc |
| 168 |
2N5094 |
HIGH ENERCY NPN TRANSISTOR |
Solid State Devices Inc |
| 169 |
2N5096 |
HIGH ENERCY NPN TRANSISTOR |
Solid State Devices Inc |
| 170 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
| 171 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
| 172 |
2N6659 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 173 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 174 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
| 175 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 176 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
| 177 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 178 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 179 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 180 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
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