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Datasheets for FORWARD R

Datasheets found :: 317
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No. Part Name Description Manufacturer
151 KBPC606 Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 6.0 A. Chenyi Electronics
152 KBPC608 Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 6.0 A. Chenyi Electronics
153 KBPC610 Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 6.0 A. Chenyi Electronics
154 KBPC8005 Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A. Chenyi Electronics
155 KBPC801 Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 8.0 A. Chenyi Electronics
156 KBPC802 Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 8.0 A. Chenyi Electronics
157 KBPC804 Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 8.0 A. Chenyi Electronics
158 KBPC806 Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 8.0 A. Chenyi Electronics
159 KBPC808 Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 8.0 A. Chenyi Electronics
160 KBPC810 Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 8.0 A. Chenyi Electronics
161 LM5000-3MTCEP V(in): -0.3 to +40V; enhanced plastic high voltage switch mode regulator. For flyback regulator, forward regulator, boost regulator, distributed power converters, selected military and avionics applications National Semiconductor
162 MB252 Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25A at Tc=55degC. Rectron Semiconductor
163 NTE5814 6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 6A. NTE Electronics
164 NTE5815 6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max average forward rectified current 6A. NTE Electronics
165 Q62702-A1025 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
166 Q62702-A1036 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
167 Q62702-A1037 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
168 Q62702-A1038 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
169 Q62702-A1039 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
170 Q62702-A1211 Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) Siemens
171 Q62702-A1261 Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
172 Q62702-A1267 Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
173 Q62702-A1268 Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
174 Q62702-A787 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
175 Q62702-A938 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
176 Q62702-A940 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
177 Q62702-A942 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
178 SB160S Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 1.0 A. Panjit International Inc
179 SB660F Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 6 A. Panjit International Inc
180 SB860CT Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 100degC 8 A. Panjit International Inc


Datasheets found :: 317
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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