DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for HFE

Datasheets found :: 1705
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 2N6718 0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
152 2N6719 0.850W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 - hFE Continental Device India Limited
153 2N6726 0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE Continental Device India Limited
154 2N6727 0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE Continental Device India Limited
155 2N6728 0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
156 2N6729 0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
157 2N6730 0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
158 2N6740 100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. Continental Device India Limited
159 2N697 0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. Continental Device India Limited
160 2N699 0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. Continental Device India Limited
161 2N708 0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. Continental Device India Limited
162 2N718A 0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
163 2N720A 0.500W Switching NPN Metal Can Transistor. 80V Vceo, A Ic, 20 hFE. Continental Device India Limited
164 2N915 0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. Continental Device India Limited
165 2N917 0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. Continental Device India Limited
166 2N918 0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. Continental Device India Limited
167 2N930 0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. Continental Device India Limited
168 2N930A 0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. Continental Device India Limited
169 2SA1235A 200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 Isahaya Electronics Corporation
170 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
171 2SA1363 500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 Isahaya Electronics Corporation
172 2SA1366 150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 Isahaya Electronics Corporation
173 2SA1398 900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 Isahaya Electronics Corporation
174 2SA1434 PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications SANYO
175 2SA1435 PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications SANYO
176 2SA1436 PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications SANYO
177 2SA1766 PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications SANYO
178 2SA1946 500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 Isahaya Electronics Corporation
179 2SA1995 450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. Isahaya Electronics Corporation
180 2SA1998 600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. Isahaya Electronics Corporation


Datasheets found :: 1705
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



© 2024 - www Datasheet Catalog com