| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1SS394 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 152 |
1SS395 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 153 |
1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 154 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 155 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 156 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 157 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 158 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 159 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
| 160 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 161 |
2FI100A-030 |
fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 162 |
2FI100A-060 |
fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 163 |
2FI100F-030 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 164 |
2FI100F-060 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 165 |
2FI100G-100 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 166 |
2FWJ42N |
SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 167 |
2GWJ42 |
SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 168 |
2GWJ42C |
SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 169 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 170 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 171 |
2N1300 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 172 |
2N1301 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 173 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 174 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 175 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 176 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 177 |
2N1499A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 178 |
2N1499B |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 179 |
2N1500 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 180 |
2N1613 |
Silicon NPN Planar Transistor for RF amplifiers and high speed switches |
AEG-TELEFUNKEN |
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