| No. |
Part Name |
Description |
Manufacturer |
| 151 |
ECP053D |
�� Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 152 |
ECP053D-PCB2450 |
�� Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 153 |
ECP053D-PCB2600 |
�� Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 154 |
ECP053G |
�� Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 155 |
ECP053G-PCB2450 |
�� Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 156 |
ECP053G-PCB2600 |
�� Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 157 |
ECP103 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 158 |
ECP103D |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 159 |
ECP103D-PCB2450 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 160 |
ECP103D-PCB2650 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 161 |
ECP103G |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 162 |
ECP103G-PCB2450 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 163 |
ECP103G-PCB2650 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 164 |
ECP203 |
2 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 165 |
ECP203D |
2 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 166 |
ECP203D-PCB2450 |
2 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 167 |
ECP203D-PCB2650 |
2 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 168 |
ECP203G |
2 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 169 |
ECP203G-PCB2450 |
2 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 170 |
ECP203G-PCB2650 |
2 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 171 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
| 172 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 173 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
| 174 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 175 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 176 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 177 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 178 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 179 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
| 180 |
G91290-22 |
Connector type: FC; supply voltage: 20V; InGaAs PIN photodiode with preamp: mini-DIL type, 1.3/1.55um, 156, 622 Mbps/1.25, 2.5Gbps |
Hamamatsu Corporation |
| | | |
