| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 152 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 153 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 154 |
2SC6026CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 155 |
2SC6026MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 156 |
2SC6100 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 157 |
2SC6133 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 158 |
2SC6134 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 159 |
2SC6135 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 160 |
2SC982 |
Silicon NPN epitaxial planar transistor, Printer Drive, Core Drive and LED drive, low frequency amplifier applications |
TOSHIBA |
| 161 |
2SC982 |
NPN EPITAXIAL TYPE (PRINTER DRIVE/ CORE DRIVER AND LED DRIVE/ LOW FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 162 |
2SC982TM |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications |
TOSHIBA |
| 163 |
2SD1435K |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 164 |
2SD2102 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER |
Hitachi Semiconductor |
| 165 |
2SD2108 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 166 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 167 |
2SD2636 |
Power transistor for low frequency applications |
TOSHIBA |
| 168 |
2SD2686 |
Power transistor for low frequency applications |
TOSHIBA |
| 169 |
2SD2719 |
Power transistor for low frequency applications |
TOSHIBA |
| 170 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 171 |
2SD525 |
Power transistor for low frequency applications |
TOSHIBA |
| 172 |
2SD688 |
Silicon NPN epitaxial darlington medium power, low frequency transistor |
TOSHIBA |
| 173 |
2SD689 |
Silicon NPN epitaxial darlington low frequency medium power transistor |
TOSHIBA |
| 174 |
2SD798 |
Power transistor for low frequency applications |
TOSHIBA |
| 175 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 176 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 177 |
2SJ486 |
Silicon P Channel MOS FET Low FrequencyPower Switching |
Hitachi Semiconductor |
| 178 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 179 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
| 180 |
2SK1740 |
HF amplifiers low frequency amplifiers analog switches |
SANYO |
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