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Datasheets for LOW VO

Datasheets found :: 8003
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 1N5546C 0.4W LOW VOLTAGE AVALANCHE DIODES Jinan Gude Electronic Device
152 1N5546D 0.4W LOW VOLTAGE AVALANCHE DIODES Jinan Gude Electronic Device
153 1N5829 Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. USHA India LTD
154 1N5830 Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. USHA India LTD
155 1N5831 Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. USHA India LTD
156 1N5832 Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. USHA India LTD
157 1N5833 Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. USHA India LTD
158 1N5834 Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. USHA India LTD
159 1SS293 Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching TOSHIBA
160 1SS294 Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching TOSHIBA
161 1SS319 Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching TOSHIBA
162 1SS321 Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching TOSHIBA
163 1SS322 Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching TOSHIBA
164 1SS348 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
165 1SS357 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
166 1SS383 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
167 1SS384 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
168 1SS391 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
169 1SS396 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
170 28LV256JC-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
171 28LV256JC-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
172 28LV256JC-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
173 28LV256JC-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
174 28LV256JI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
175 28LV256JI-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
176 28LV256JI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
177 28LV256JI-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
178 28LV256JM-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
179 28LV256JM-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
180 28LV256JM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC


Datasheets found :: 8003
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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