| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N943 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
| 152 |
1N943A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.036V |
Motorola |
| 153 |
1N943B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V |
Motorola |
| 154 |
1N944 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
| 155 |
1N944A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
| 156 |
1N944B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V |
Motorola |
| 157 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
| 158 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
| 159 |
1N945B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V |
Motorola |
| 160 |
1N957 |
500 mW silicon planar zener diode. Max zener voltage 6.8 V. |
Fairchild Semiconductor |
| 161 |
1N958 |
500 mW silicon planar zener diode. Max zener voltage 7.5 V. |
Fairchild Semiconductor |
| 162 |
1N959 |
500 mW silicon planar zener diode. Max zener voltage 8.2 V. |
Fairchild Semiconductor |
| 163 |
1N960 |
500 mW silicon planar zener diode. Max zener voltage 9.1 V. |
Fairchild Semiconductor |
| 164 |
1N961 |
500 mW silicon planar zener diode. Max zener voltage 10.0 V. |
Fairchild Semiconductor |
| 165 |
1N962 |
500 mW silicon planar zener diode. Max zener voltage 11.0 V. |
Fairchild Semiconductor |
| 166 |
1N963 |
500 mW silicon planar zener diode. Max zener voltage 12.0 V. |
Fairchild Semiconductor |
| 167 |
1N964 |
500 mW silicon planar zener diode. Max zener voltage 13.0 V. |
Fairchild Semiconductor |
| 168 |
1N965 |
500 mW silicon planar zener diode. Max zener voltage 15.0 V. |
Fairchild Semiconductor |
| 169 |
1N966 |
500 mW silicon planar zener diode. Max zener voltage 16.0 V. |
Fairchild Semiconductor |
| 170 |
1N967 |
500 mW silicon planar zener diode. Max zener voltage 18.0 V. |
Fairchild Semiconductor |
| 171 |
1N968 |
500 mW silicon planar zener diode. Max zener voltage 20.0 V. |
Fairchild Semiconductor |
| 172 |
1N969 |
500 mW silicon planar zener diode. Max zener voltage 22.0 V. |
Fairchild Semiconductor |
| 173 |
1N970 |
500 mW silicon planar zener diode. Max zener voltage 24.0 V. |
Fairchild Semiconductor |
| 174 |
1N971 |
500 mW silicon planar zener diode. Max zener voltage 27.0 V. |
Fairchild Semiconductor |
| 175 |
1N972 |
500 mW silicon planar zener diode. Max zener voltage 30.0 V. |
Fairchild Semiconductor |
| 176 |
1N973 |
500 mW silicon planar zener diode. Max zener voltage 33.0 V. |
Fairchild Semiconductor |
| 177 |
1W010 |
Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
Jinan Gude Electronic Device |
| 178 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 179 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
| 180 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
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