No. |
Part Name |
Description |
Manufacturer |
151 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
152 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
153 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
154 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
155 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
156 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
157 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
158 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
159 |
27-FEB |
10 TO 500 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
160 |
28-FEB |
10 TO 1000 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
161 |
2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
162 |
2920 |
20 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
163 |
2N3375 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
164 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
165 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
166 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
167 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
168 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
169 |
2N3927 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
170 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
171 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
172 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
173 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
174 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
175 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
176 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
177 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
178 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
179 |
2SC2558K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080190 series is also the datasheet of 2SC2558K, see the Electrical Characteristics table) |
NEC |
180 |
2SC2558M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080191 series is also the datasheet of 2SC2558M, see the Electrical Characteristics table) |
NEC |
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