No. |
Part Name |
Description |
Manufacturer |
151 |
1SS345 |
UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode |
SANYO |
152 |
1SS350 |
UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode |
SANYO |
153 |
1SS351 |
Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications |
SANYO |
154 |
1SS358 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
155 |
1SS365 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
156 |
1SS366 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
157 |
1SS375 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
158 |
1SS43 |
Silicon UHF Mixer Diode |
NEC |
159 |
1SS86 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
160 |
1SS88 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
161 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
162 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
163 |
1SS97 |
Silicon Mixer Diode |
NEC |
164 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
165 |
1SS98 |
Silicon Mixer Diode |
NEC |
166 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
167 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
168 |
1SS99 |
Silicon Detector & Mixer Diode |
NEC |
169 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
170 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
171 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
172 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
173 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
174 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
175 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
176 |
2N3291 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
177 |
2N3292 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
178 |
2N3293 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
179 |
2N3294 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
180 |
2N3323 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| | | |