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Datasheets for NET

Datasheets found :: 4938
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No. Part Name Description Manufacturer
151 BA6566/F/FP Communications LSIs > ICs for telephone > Speech network ROHM
152 BA6566F Speech network ROHM
153 BA6566FP Speech network ROHM
154 BA6567K Speech Network ROHM
155 BA6569AFP Speech network for telephones ROHM
156 BA6569AS Speech network for telephones ROHM
157 BA6569AS/AFP Communications LSIs > ICs for telephone > Speech network ROHM
158 BA6569FP Speech Network for Telephone Set ROHM
159 BA6569S Speech Network for Telephone Set ROHM
160 BA8215 Speech Network for Telephone Set ROHM
161 BA8215L Speech Network for Telephone Set ROHM
162 BA8216 Speech Network for Telephone Set ROHM
163 BB1110B DDR SDRAM TERMINATOR NETWORKS. BI Technologies
164 BB1110TB DDR SDRAM TERMINATOR NETWORKS. BI Technologies
165 BB2110DI DDR SDRAM TERMINATOR NETWORKS. BI Technologies
166 BCM4780 NASoC Network-Attached Storage Processor Broadcom
167 BF1005 RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
168 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
169 BF1005R RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Infineon
170 BF1005S RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB Infineon
171 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
172 BF1005SR RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
173 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
174 BF1009S RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
175 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
176 BF1009SR RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
177 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
178 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
179 BF2030 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
180 BF2030R RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon


Datasheets found :: 4938
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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