No. |
Part Name |
Description |
Manufacturer |
151 |
BS616LV8022AI |
70/100ns 20-45mA 2.4-5.5V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable |
Brilliance Semiconductor |
152 |
BS616LV8022BC |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
153 |
BS616LV8022BI |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
154 |
BS616LV8023 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
155 |
BS616LV8023BC |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
156 |
BS616LV8023BI |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
157 |
BS616LV8025 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
158 |
BS616LV8025BC |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
159 |
BS616LV8025BI |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
160 |
BS616UV8020 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
161 |
BS616UV8020BC |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
162 |
BS616UV8020BI |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
163 |
BS616UV8021 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
164 |
BS616UV8021BC |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
165 |
BS616UV8021BI |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
166 |
BS616UV8021DC |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
167 |
BS616UV8021DI |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
168 |
BS616UV8021FC |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
169 |
BS616UV8021FI |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable |
Brilliance Semiconductor |
170 |
CD21-rev3 |
Dual interface / Calypso revision 3.1 with 4,8 or 18KB EEPROM |
ST Microelectronics |
171 |
CRA12E AND S |
4, 8, 10, or 16 Terminal Package, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability, Choice of Isolated or Bussed Circuits |
Vishay |
172 |
CXK77P18E160GB |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
173 |
CXK77P18E160GB-42AE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
174 |
CXK77P18E160GB-42BE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
175 |
CXK77P18E160GB-42E |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
176 |
CXK77P18E160GB-43AE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
177 |
CXK77P18E160GB-43BE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
178 |
CXK77P18E160GB-43E |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
179 |
CXK77P18E160GB-44E |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
180 |
CXK77P18E160GB-4AE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
| | | |