No. |
Part Name |
Description |
Manufacturer |
151 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
152 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
153 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
154 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
155 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
156 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
157 |
EDE1108AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
158 |
GM76C88AL |
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS |
etc |
159 |
H629 |
Gates for electronic organ (12 input) |
SGS-ATES |
160 |
H632 |
Gates for electronic organ (2x6 input) |
SGS-ATES |
161 |
HBC4727A |
7 stage frequencty divider for electron. organs |
SGS-ATES |
162 |
HBC4737A |
7 stage frequency divider for electron. organs |
SGS-ATES |
163 |
HBF4727A |
7 stage frequencty divider for electron. organs |
SGS-ATES |
164 |
HBF4737A |
7 stage frequency divider for electron. organs |
SGS-ATES |
165 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
166 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
167 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
168 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
169 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
170 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
171 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
172 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
173 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
174 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
175 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
176 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
177 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
178 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
179 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
180 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
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