| No. |
Part Name |
Description |
Manufacturer |
| 151 |
10SI8R |
Silicon rectifier diode |
IPRS Baneasa |
| 152 |
10SI8R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V |
IPRS Baneasa |
| 153 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 154 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 155 |
1200GXHH22 |
FAST RECOVERY RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 156 |
1200GXHH22 |
FAST RECOVERY RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 157 |
1200JXH23 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 158 |
12CC12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 159 |
12CD12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 160 |
12CWQ10G |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 161 |
12CWQ10GPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 162 |
12CWQ10GTR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 163 |
12CWQ10GTRL |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 164 |
12CWQ10GTRLPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 165 |
12CWQ10GTRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 166 |
12CWQ10GTRR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 167 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 168 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 169 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 170 |
12FC12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 171 |
12FD12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 172 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
| 173 |
12GC11 |
Silicon diffused junction rectifier 400V 12A |
TOSHIBA |
| 174 |
12JC11 |
Silicon diffused junction rectifier 600V 12A |
TOSHIBA |
| 175 |
12LC11 |
Silicon diffused junction rectifier 800V 12A |
TOSHIBA |
| 176 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
| 177 |
12NC11 |
Silicon diffused junction rectifier 1000V 12A |
TOSHIBA |
| 178 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
| 179 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
| 180 |
150LD11 |
Silicon alloy-diffused junction rectifier 800V 150A |
TOSHIBA |
| | | |
