| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1416GN-600V |
GaN Transistors |
Microsemi |
| 152 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
| 153 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 154 |
1417-12A |
12 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
| 155 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 156 |
1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
| 157 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
| 158 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 159 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 160 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 161 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 162 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 163 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
| 164 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 165 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 166 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 167 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 168 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 169 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 170 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 171 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 172 |
152NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
| 173 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 174 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 175 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 176 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 177 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 178 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 179 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 180 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
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