| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 152 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 153 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 154 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 155 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 156 |
1SS199 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 157 |
1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 158 |
1SV100 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 159 |
1SV100 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
TOSHIBA |
| 160 |
1SV101 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 161 |
1SV102 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 162 |
1SV103 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 163 |
1SV123 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 164 |
1SV147 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 165 |
1SV149 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 166 |
1SV153 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 167 |
1SV153 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
TOSHIBA |
| 168 |
1SV160 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 169 |
1SV161 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 170 |
1SV162 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 171 |
1T362 |
Silicon Variable Capacitance Diode |
SONY |
| 172 |
1T362A |
Silicon Variable Capacitance Diode |
SONY |
| 173 |
1T363 |
Silicon Variable Capacitance Diode |
SONY |
| 174 |
1T363A |
Silicon Variable Capacitance Diode |
SONY |
| 175 |
1T365 |
Silicon Variable Capacitance Diode |
SONY |
| 176 |
1T369 |
Silicon Variable Capacitance Diode |
SONY |
| 177 |
1T379 |
Silicon Variable Capacitance Diode for Electronic |
SONY |
| 178 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 179 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 180 |
1V014 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 22 V @ 1mA DC test current. |
NTE Electronics |
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