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Datasheets for WO

Datasheets found :: 7892
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No. Part Name Description Manufacturer
151 2W005 2.0A WOM BRIDGE RECTIFIERS Leshan Radio Company
152 2W01 2.0A WOM BRIDGE RECTIFIERS Leshan Radio Company
153 2W02 2.0A WOM BRIDGE RECTIFIERS Leshan Radio Company
154 2W04 2.0A WOM BRIDGE RECTIFIERS Leshan Radio Company
155 2W06 2.0A WOM BRIDGE RECTIFIERS Leshan Radio Company
156 2W08 2.0A WOM BRIDGE RECTIFIERS Leshan Radio Company
157 2W10 2.0A WOM BRIDGE RECTIFIERS Leshan Radio Company
158 37LV128 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo Microchip
159 37LV36 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m Microchip
160 37LV65 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m Microchip
161 4036BP 4 word x 8 bit static RAM (binary addressing) TOSHIBA
162 4039BP 4 word x 8 bit static RAM (direct word-line addressing) TOSHIBA
163 4039BP 4 word x 8 bit static RAM (direct word-line addressing) TOSHIBA
164 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
165 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
166 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
167 54170DMQB 7 V, 4 x 4 register file woth open-collector output National Semiconductor
168 54170FMQB 7 V, 4 x 4 register file woth open-collector output National Semiconductor
169 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
170 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
171 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
172 74170PC 16-bit register file, organized as 4 words of 4 bits each TUNGSRAM
173 AB-191 THERE'S A WORLD OF LINE DRIVERS TO CHOOSE FROM Burr Brown
174 AC164029 This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit ... Microchip
175 AC164030 This powerful (400 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit ... Microchip
176 ACT112 CT-relay. Ultra small automotive relay. 1 form C. Coil voltage 12 V. Matsushita Electric Works(Nais)
177 ACT212 CT-relay. Ultra small automotive relay. 1 form C x 2 (8 terminal type). Coil voltage 12 V. Matsushita Electric Works(Nais)
178 ACT3492 MIL-STD-1553B Remote Terminal, BUS Controller, or Passive Monitor Hybrid with Status Word Control Dual Low Power Monolithic BUS Tranceivers Aeroflex Circuit Technology
179 ACT512 CT-relay. Ultra small automotive relay. 1 form C x 2 (10 terminals type). Coil voltage 12 V. Matsushita Electric Works(Nais)
180 ACV11012 CV-relay. Automotive low profile micro-ISO relay. Standard type. 1 form C. Plug-in terminal. Coil voltage 12 V. Matsushita Electric Works(Nais)


Datasheets found :: 7892
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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