No. |
Part Name |
Description |
Manufacturer |
151 |
2W005 |
2.0A WOM BRIDGE RECTIFIERS |
Leshan Radio Company |
152 |
2W01 |
2.0A WOM BRIDGE RECTIFIERS |
Leshan Radio Company |
153 |
2W02 |
2.0A WOM BRIDGE RECTIFIERS |
Leshan Radio Company |
154 |
2W04 |
2.0A WOM BRIDGE RECTIFIERS |
Leshan Radio Company |
155 |
2W06 |
2.0A WOM BRIDGE RECTIFIERS |
Leshan Radio Company |
156 |
2W08 |
2.0A WOM BRIDGE RECTIFIERS |
Leshan Radio Company |
157 |
2W10 |
2.0A WOM BRIDGE RECTIFIERS |
Leshan Radio Company |
158 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
159 |
37LV36 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m |
Microchip |
160 |
37LV65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m |
Microchip |
161 |
4036BP |
4 word x 8 bit static RAM (binary addressing) |
TOSHIBA |
162 |
4039BP |
4 word x 8 bit static RAM (direct word-line addressing) |
TOSHIBA |
163 |
4039BP |
4 word x 8 bit static RAM (direct word-line addressing) |
TOSHIBA |
164 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
165 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
166 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
167 |
54170DMQB |
7 V, 4 x 4 register file woth open-collector output |
National Semiconductor |
168 |
54170FMQB |
7 V, 4 x 4 register file woth open-collector output |
National Semiconductor |
169 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
170 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
171 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
172 |
74170PC |
16-bit register file, organized as 4 words of 4 bits each |
TUNGSRAM |
173 |
AB-191 |
THERE'S A WORLD OF LINE DRIVERS TO CHOOSE FROM |
Burr Brown |
174 |
AC164029 |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
175 |
AC164030 |
This powerful (400 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
176 |
ACT112 |
CT-relay. Ultra small automotive relay. 1 form C. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
177 |
ACT212 |
CT-relay. Ultra small automotive relay. 1 form C x 2 (8 terminal type). Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
178 |
ACT3492 |
MIL-STD-1553B Remote Terminal, BUS Controller, or Passive Monitor Hybrid with Status Word Control Dual Low Power Monolithic BUS Tranceivers |
Aeroflex Circuit Technology |
179 |
ACT512 |
CT-relay. Ultra small automotive relay. 1 form C x 2 (10 terminals type). Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
180 |
ACV11012 |
CV-relay. Automotive low profile micro-ISO relay. Standard type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
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