| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5617US |
Fast Rectifier (100-500ns) |
Microsemi |
| 152 |
1N5619 |
Fast Rectifier (100-500ns) |
Microsemi |
| 153 |
1N5619US |
Fast Rectifier (100-500ns) |
Microsemi |
| 154 |
1N5621 |
Fast Rectifier (100-500ns) |
Microsemi |
| 155 |
1N5621US |
Fast Rectifier (100-500ns) |
Microsemi |
| 156 |
1N5623 |
Fast Rectifier (100-500ns) |
Microsemi |
| 157 |
1N5623US |
Fast Rectifier (100-500ns) |
Microsemi |
| 158 |
1N643 |
Fast Rectifier (100-500ns) |
Microsemi |
| 159 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 160 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 161 |
2020-500 |
Delay 500 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 162 |
2021-500 |
Delay 500 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 163 |
2075-500 |
Delay 500 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 164 |
2075-5000 |
Delay 5000 +/-100 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 165 |
2211-500C |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 166 |
2211-500C |
data delay devices |
Data Delay Devices Inc |
| 167 |
2211-500D |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 168 |
2211-500D |
data delay devices |
Data Delay Devices Inc |
| 169 |
2211-500G |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 170 |
2211-500G |
data delay devices |
Data Delay Devices Inc |
| 171 |
2214-500C |
data delay devices |
Data Delay Devices Inc |
| 172 |
2214-500C |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 173 |
2214-500D |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 174 |
2214-500D |
data delay devices |
Data Delay Devices Inc |
| 175 |
2214-500G |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 176 |
2214-500G |
data delay devices |
Data Delay Devices Inc |
| 177 |
2729GN-500 |
GaN Transistors |
Microsemi |
| 178 |
2729GN-500V |
|
Microsemi |
| 179 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 180 |
30HFU(R)-500 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
| | | |
