No. |
Part Name |
Description |
Manufacturer |
151 |
PTF080601E |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
152 |
PTF080601F |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
153 |
PTF080901 |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
154 |
PTF080901E |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
155 |
PTF080901F |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
156 |
PTF10138 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
157 |
PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
158 |
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
159 |
QPP-004 |
QuikPAC module data. 60W, 925-960 MHz, Class AB power stage. |
XEMOD |
160 |
QPP-006 |
QuikPAC module data. 120W, 925-960 MHz, Class AB power stage. |
XEMOD |
161 |
QPP-007 |
QuikPAC module data. 35W, 925-960 MHz, Class AB driver stage. |
XEMOD |
162 |
QPP-008 |
QuikPAC module data. 35W, 925-960 MHz, Class AB driver stage. |
XEMOD |
163 |
QPP-010 |
QuikPAC module data. 60W, 925-960 MHz, Class AB power stage. |
XEMOD |
164 |
QPP-012 |
QuikPAC module data. 120W, 925-960 MHz, Class AB power stage. |
XEMOD |
165 |
QPP-014 |
QuikPAC module data. 35W, 925-960 MHz, Class AB driver stage. |
XEMOD |
166 |
QPP-025 |
QuikPAC module data. 200W, 925-960 MHz, Class AB power stage. |
XEMOD |
167 |
QPP-026 |
QuikPAC module data. 200W, 925-960 MHz, Class AB power stage. |
XEMOD |
168 |
RCA-2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
169 |
RCA0610-30 |
30-W, Broadband, 620-to-960-MHz, Emitter-Ballasted, Gold-Metallized NPN RF Power Transistor |
RCA Solid State |
170 |
SD1398 |
850-960 MHz APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
171 |
SD1398 |
850-960 MHZ APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
172 |
SD1400-03 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range |
SGS Thomson Microelectronics |
173 |
SD1420-01 |
860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications |
SGS Thomson Microelectronics |
174 |
SD1423 |
RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS |
SGS Thomson Microelectronics |
175 |
SD1423 |
800-960MHZ BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
176 |
SD1425 |
800-960MHz 30W 24V gold metallized NPN RF transistor, high linearity Class AB operation |
SGS Thomson Microelectronics |
177 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
178 |
SD1495-03 |
24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz |
SGS Thomson Microelectronics |
179 |
SD1496-03 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
180 |
SD4017 |
806-960 MHz CELLULAR BASE STATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
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