No. |
Part Name |
Description |
Manufacturer |
151 |
RC336ACFW |
V.34 data/ V.17 fax, modem device set for desktop applications |
Rockwell |
152 |
RC336DPFL |
V.34 data, V.17 fax, AudioSpan, modem data pump |
Rockwell |
153 |
RCV336ACF |
V.34 data/ V.17 fax, modem device set for desktop applications |
Rockwell |
154 |
RCV336ACFW |
V.34 data/ V.17 fax, modem device set for desktop applications |
Rockwell |
155 |
RCV336ACFW_SVD |
V.34 data/ V.17 fax, modem device set for desktop applications |
Rockwell |
156 |
RCV336ACF_SVD |
V.34 data/ V.17 fax, modem device set for desktop applications |
Rockwell |
157 |
RCV336DPFL |
V.34 data, V.17 fax, AudioSpan, voice, modem data pump |
Rockwell |
158 |
RCV336DPFL_SP |
V.34 data, V.17 fax, AudioSpan, voice, speakerphone, modem data pump |
Rockwell |
159 |
SDA676-36 |
3600 V, 0.175 A high voltage, fast recovery single phase bridge |
Solid State Devices Inc |
160 |
SG53125.1750M |
Crystal oscillator, 25.1750MHz |
Epson Company |
161 |
SG53125.1750M |
Crystal oscillator, 25.1750MHz |
Epson Company |
162 |
STB21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package |
ST Microelectronics |
163 |
STB24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
164 |
STC04IE170HP |
Monolithic emitter switched bipolar transistor ESBT� 1700 V - 4 A - 0.17 � |
ST Microelectronics |
165 |
STC04IE170HV |
Monolithic emitter switched bipolar transistor ESBT� 1700 V - 4 A - 0.17 � |
ST Microelectronics |
166 |
STF21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package |
ST Microelectronics |
167 |
STF24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
168 |
STL21N65M5 |
N-channel 650 V, 0.175 Ohm, 2.7 A PowerFLAT(TM) 8x8 HV MDmesh(TM) V power MOSFET |
ST Microelectronics |
169 |
STL23NM50N |
N-channel 500 V, 0.170 Ohm typ., 14 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
170 |
STL23NM60ND |
N-channel 600 V, 0.175 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
171 |
STP21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220 package |
ST Microelectronics |
172 |
STP24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
173 |
STW21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package |
ST Microelectronics |
174 |
STW24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
175 |
TM128128C-T |
GRAPHIC TYPE MONOCHROME LCD MODULE resolution: 128x128; module size: 35.0x33.0x5.5; viewing size: 32.0x27.5; dot pitch: 0.19x0.24; dot size: 0.17x0.22; controller: S6B0741; |
TIANMA Microelectronics |
176 |
TPS7A47 |
36-V, 1-A, 4.17-?VRMS, RF LDO Voltage Regulator 20-VQFN -40 to 125 |
Texas Instruments |
177 |
TPS7A4700 |
1A, Low Noise (4.17μVrms), High Voltage Low-Dropout Linear Regulator |
Texas Instruments |
178 |
TPS7A4700RGWR |
36-V, 1-A, 4.17-?VRMS, RF LDO Voltage Regulator 20-VQFN -40 to 125 |
Texas Instruments |
179 |
TPS7A4700RGWT |
36-V, 1-A, 4.17-?VRMS, RF LDO Voltage Regulator 20-VQFN -40 to 125 |
Texas Instruments |
180 |
TPS7A4701 |
36-V, 1-A, 4.17-μVRMS, RF LDO Voltage Regulator |
Texas Instruments |
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