| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NTE1830 |
Integrated Circuit Dual Audio Power Amplifier, 5.8W (19W BTL) |
NTE Electronics |
| 152 |
NTE1831 |
Integrated Circuit Dual Audio Power Amplifier, 5.8W (19W BTL) |
NTE Electronics |
| 153 |
NTE1898 |
Integrated Circuit Dual Audio Power Amp, 5.8W (22W BTL) |
NTE Electronics |
| 154 |
NTE1899 |
Integrated Circuit Dual Audio Power Amp, 5.8W (22W BTL) |
NTE Electronics |
| 155 |
NTE472 |
Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz |
NTE Electronics |
| 156 |
SD1851 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 157 |
SHP10-15-08 |
Linear Power Amplifier 0.8W 10-1000MHz |
Motorola |
| 158 |
SHP10-15-08-15 |
Linear Power Amplifier 0.8W 10-1000MHz |
Motorola |
| 159 |
STD3NB30 |
N - CHANNEL 300V - 1.8W - 3.2A - DPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 160 |
TA7205AP |
5.8W AUDIO POWER AMPLIFIER FOR CAR-STEREO, CAR-RADIO OUTPUT |
TOSHIBA |
| 161 |
TA7222AP |
5.8W AUDIO POWER AMPLIFIER |
TOSHIBA |
| 162 |
TA7270P |
5.8W DUAL AUDIO POWER AMPLIFIER |
TOSHIBA |
| 163 |
TA7271P |
5.8W DUAL AUDIO POWER AMPLIFIER |
TOSHIBA |
| 164 |
TA727OP |
5.8W DUAL, 19W BTL AUDIO POWER AMPLIFIER |
TOSHIBA |
| 165 |
TA7280 |
5.8W DUAL / 22W BTL AUDIO POWER AMPLIFIER |
TOSHIBA |
| 166 |
TA7280P |
5.8W Dual Audio Power Amplifier. 22W BTL Audio Power Amplifier. |
TOSHIBA |
| 167 |
TA7281P |
5.8W Dual Audio Power Amplifier. 22W BTL Audio Power Amplifier. |
TOSHIBA |
| 168 |
TA8208H |
5.8W Dual Audio Power Amplifier |
TOSHIBA |
| 169 |
TAA611A |
Audio Amplifier 1.8W 9V 4 ohms |
SGS-ATES |
| 170 |
TC5517CF-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 171 |
TC5517CF-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 172 |
TC5517CFL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 173 |
TC5517CFL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 174 |
TC5517CP-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 175 |
TC5517CP-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 176 |
TC5517CPL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 177 |
TC5517CPL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 178 |
TCC20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 179 |
TMM2063AP-10 |
100ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
| 180 |
TMM2063AP-12 |
120ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
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