No. |
Part Name |
Description |
Manufacturer |
151 |
1N6677 |
Diode Schottky 40V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
152 |
1N6677UR-1 |
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Microsemi |
153 |
1N701 |
Zener Diode 0.25W |
Motorola |
154 |
1N914A |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
155 |
1N914AF |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
156 |
1N914B |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
157 |
1N941B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.239V |
Motorola |
158 |
274.400 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 4/10. Nominal resistance cold 0.227 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
159 |
274.750 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 3/4. Nominal resistance cold 0.293 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
160 |
274.800 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 8/10. Nominal resistance cold 0.271 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
161 |
2N1886 |
Trans GP BJT NPN 60V 0.25A 3-Pin TO-39 |
New Jersey Semiconductor |
162 |
2N2369 |
Trans GP BJT NPN 15V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
163 |
2N2894 |
Trans GP BJT PNP 12V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
164 |
2N3209 |
Trans GP BJT PNP 20V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
165 |
2N3227 |
Trans GP BJT NPN 20V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
166 |
2N3235 |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
167 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
168 |
2N3250 |
Trans GP BJT PNP 40V 0.2A 3-Pin TO-18 Box |
New Jersey Semiconductor |
169 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
170 |
2N3250A |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
171 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
172 |
2N3251 |
Trans GP BJT PNP 40V 0.2A 3-Pin TO-18 Box |
New Jersey Semiconductor |
173 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
174 |
2N3251A |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
175 |
2N327 |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
176 |
2N3277 |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
177 |
2N327A |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
178 |
2N328 |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
179 |
2N3287 |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
180 |
2N328A |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
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