No. |
Part Name |
Description |
Manufacturer |
151 |
LT1EH67A |
1616 Size, 0.8mm Thickness, Compact Dichromatic Leadless Chip LED Devices |
SHARP |
152 |
LT1F67A |
1608 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
153 |
LT1H40A |
2125 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
154 |
LT1H67A |
1608 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
155 |
LT1K40A |
2125 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
156 |
LT1K67A |
1608 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
157 |
LT1KS67A |
1616 Size, 0.8mm Thickness, Compact Dichromatic Leadless Chip LED Devices |
SHARP |
158 |
LT1P40A |
2125 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
159 |
LT1P67A |
1608 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
160 |
LT1S40A |
2125 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
161 |
LT1S67A |
1608 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
162 |
LT1U40A |
2125 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
163 |
LT1U67A |
1608 Size, 0.8mm Thickness, Leadless Chip LED Devices |
SHARP |
164 |
LT1W67A |
1616 Size, 0.8mm Thickness, Compact Full Color Leadless Chip LED Device |
SHARP |
165 |
LT1X67A |
1608 Size, 0.8mm Thickness, Leadless Chip LED Devices |
etc |
166 |
MDA44 |
TSOP, 10, 16mm Body WD, EiAJ Type II, 0.8mm Pitch 44LD |
National Semiconductor |
167 |
MDB44 |
TSOP, 10, 16mm Body WD, EiAJ Type II, 0.8mm Pitch 44 LD, Reverse Form |
National Semiconductor |
168 |
MSM38S0000 |
0.8m Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays |
OKI electronic components |
169 |
MSM98S |
0.8m Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays |
OKI electronic components |
170 |
MSM98S000 |
0.8m Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays |
OKI electronic components |
171 |
MX636JQ |
True RMS-to-DC converter. 1MHz bandwidth for Vrms > 100mV. Auxiliary dB output: 50dB range. Low power: 0.8mA(typ). |
MAXIM - Dallas Semiconductor |
172 |
MX636KQ |
True RMS-to-DC converter. 1MHz bandwidth for Vrms > 100mV. Auxiliary dB output: 50dB range. Low power: 0.8mA(typ). |
MAXIM - Dallas Semiconductor |
173 |
QTLP600CIBTR |
Blue Surface Mount LED Lamp - Super Bright 0603 (0.8mm Height) |
Fairchild Semiconductor |
174 |
QTLP600CIGTR |
True Green Surface Mount LED Lamp - Super Bright 0603 (0.8mm Height) |
Fairchild Semiconductor |
175 |
TCA520B |
V(cc): 2 to 20V; I(cc): 0.8mA; ; bipolar integrated operational amplifier for low-power and low-voltage applications |
Philips |
176 |
TCA520D |
V(cc): 2 to 20V; I(cc): 0.8mA; ; bipolar integrated operational amplifier for low-power and low-voltage applications |
Philips |
177 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
178 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
179 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
180 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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