| No. |
Part Name |
Description |
Manufacturer |
| 151 |
E204D |
6 inverters, extended temperature range, TTL fast series, possibly equivalent SN84H04N |
RFT |
| 152 |
EECF5R5H104N |
Electric Double Layer Capacitors (Multilayer Coin Type) - F-N |
Panasonic |
| 153 |
EECRF0H104N |
Electric Double Layer Capacitors (Multilayer Coin Type) - RF-N |
Panasonic |
| 154 |
ESAC25M-04N |
FUJI SILICON DIODE SPECIFICATION |
Fuji Electric |
| 155 |
FCH104N60F |
N-Channel SuperFET�II FRFET� MOSFET 600V, 37A, 104m? |
Fairchild Semiconductor |
| 156 |
FCP104N60F |
N-Channel SuperFET� ll FRFET� MOSFET |
Fairchild Semiconductor |
| 157 |
FJH241/7404N |
Sextuple single-input inverter gate |
Mullard |
| 158 |
FS0204NA |
800 V, sensitive gate SCR |
Fagor |
| 159 |
FS0204NB |
800 V, sensitive gate SCR |
Fagor |
| 160 |
FS0204NN |
800 V, surface mount SCR |
Fagor |
| 161 |
GJH241/74H04N |
Sextuple single-input inverter gate |
Mullard |
| 162 |
GSP82C404N |
Dual programmable graphics frequency generator |
Integrated Circuit Systems |
| 163 |
HA12204NT |
Audio Signal Processor for Cassette Deck(Dolby B-type NR with Recording System) |
Hitachi Semiconductor |
| 164 |
I74F04N |
Hex inverter |
NXP Semiconductors |
| 165 |
I74F04N |
Hex inverter |
Philips |
| 166 |
ICS82C404N |
Dual Programmable Graphics Frequency Generator |
Integrated Circuit Systems |
| 167 |
IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... |
Infineon |
| 168 |
IPB04N03L |
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL |
Infineon |
| 169 |
IPB04N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, D2PAK, RDSon = 3.9mOhm, 80A, LL |
Infineon |
| 170 |
IPD04N03L |
OptiMOS Power MOSFET, 30V, DPAK (5-Pin), RDSon = 4.2mOhm, 100A, LL |
Infineon |
| 171 |
IPD04N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, D-PAK, RDSon = 3.8mOhm, 50A, LL |
Infineon |
| 172 |
IPD04N03LB |
OptiMOS®2 - SuperSO8, SO8, DPAK |
Infineon |
| 173 |
IPF04N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, Reverse D-PAK, RDSon = 4.1mOhm, 50A, LL |
Infineon |
| 174 |
IPI04N03LA |
OptiMOS®2 - Power packages |
Infineon |
| 175 |
IPP04N03L |
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.3mOhm, 80A, LL |
Infineon |
| 176 |
IPP04N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 4.2mOhm, 80A, LL |
Infineon |
| 177 |
IPS04N03LA |
OptiMOS®2 - Power packages |
Infineon |
| 178 |
IPU04N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 4.0mOhm, 50A, LL |
Infineon |
| 179 |
KA2804N |
LINEAR INTEGRATED CIRCUIT |
Samsung Electronic |
| 180 |
KSM-404N |
Optic receiver module |
Kodenshi Corp |
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