| No. |
Part Name |
Description |
Manufacturer |
| 151 |
HYB514400BJL-80 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
| 152 |
HYB514800BJ |
512kx8-Bit Dynamic RAM |
Siemens |
| 153 |
HYB514800BJ-60 |
512kx8-Bit Dynamic RAM |
Siemens |
| 154 |
HYB514800BJ-70 |
512kx8-Bit Dynamic RAM |
Siemens |
| 155 |
HYB514800BJ-80 |
512kx8-Bit Dynamic RAM |
Siemens |
| 156 |
IDT49C460BJ |
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT |
IDT |
| 157 |
IDT49C460BJB |
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT |
IDT |
| 158 |
IP1060BJ |
Switched-Mode power supply control circuit |
Seagate Microelectronics |
| 159 |
IP1060BJ |
Switched Mode PSU Control Circuit |
SemeLAB |
| 160 |
KM416C1000BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 161 |
KM416C1000BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 162 |
KM416C1000BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 163 |
KM416C1000BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 164 |
KM416C1000BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 165 |
KM416C1000BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 166 |
KM416C1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 167 |
KM416C1200BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 168 |
KM416C1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 169 |
KM416C1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 170 |
KM416C1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 171 |
KM416C1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 172 |
KM416V1000BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 173 |
KM416V1000BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 174 |
KM416V1000BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 175 |
KM416V1000BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 176 |
KM416V1000BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 177 |
KM416V1000BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 178 |
KM416V1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 179 |
KM416V1200BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 180 |
KM416V1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| | | |
