| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IRAM136-1060BS |
I0A, 600V Integrated Power Module with Internal Shunt Resistor |
International Rectifier |
| 152 |
IXGH40N30BS |
HiPerFAST IGBT |
IXYS Corporation |
| 153 |
KF410BS |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 154 |
KF430BS |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 155 |
KF450BS |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 156 |
KF470BS |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 157 |
KF490BS |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 158 |
KF510BS |
400MHz-500MHz Band(150ohm) |
Korea Electronics (KEC) |
| 159 |
KM416C4000BS-45 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 45ns |
Samsung Electronic |
| 160 |
KM416C4000BS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns |
Samsung Electronic |
| 161 |
KM416C4000BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
| 162 |
KM416C4100BS-45 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 45ns |
Samsung Electronic |
| 163 |
KM416C4100BS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns |
Samsung Electronic |
| 164 |
KM416C4100BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 165 |
KM416V4000BS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 166 |
KM416V4000BS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 167 |
KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 168 |
KM416V4000BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 169 |
KM416V4000BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 170 |
KM416V4000BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 171 |
KM416V4100BS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 172 |
KM416V4100BS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 173 |
KM416V4100BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 174 |
KM416V4100BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 175 |
KM416V4100BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 176 |
KM416V4100BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 177 |
KM48C2000BS-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 178 |
KM48C2000BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 179 |
KM48C2000BS-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 180 |
KM48C2000BSL-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
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