| No. |
Part Name |
Description |
Manufacturer |
| 151 |
HDSP-F511-0J300 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 152 |
HDSP-F513-0J300 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 153 |
HDSP-G511-0J300 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 154 |
HDSP-G513-0J300 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 155 |
MT28F320J3 |
Q-FLASHTM MEMORY |
Micron Technology |
| 156 |
MT28F640J3 |
Q-FLASHTM MEMORY |
Micron Technology |
| 157 |
NFM18PC105R0J3 |
On-Board Type (DC) EMI Suppression Filters |
muRata |
| 158 |
P4C1024-20J3C |
20 ns, static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
| 159 |
P4C1024-20J3I |
20 ns, static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
| 160 |
RC28F320J3A-110 |
3 Volt Intel StrataFlash Memory |
Intel |
| 161 |
RC28F640J3A-120 |
3 Volt Intel StrataFlash Memory |
Intel |
| 162 |
SMC30J30A |
3000 W Transil™ |
ST Microelectronics |
| 163 |
SMC30J30CA |
3000 W Transil™ |
ST Microelectronics |
| 164 |
SMC30J33A |
3000 W Transil™ |
ST Microelectronics |
| 165 |
SMC30J33CA |
3000 W Transil™ |
ST Microelectronics |
| 166 |
SML100J34 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
| 167 |
SML60J35 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
| 168 |
SVSP0J335M |
Surface mount resin molded, Ultra miniaturized chip |
NEC |
| 169 |
TCA0J335M8R |
Tantalum Capacitors (Standard) |
ROHM |
| 170 |
TCA0J336M8R |
Tantalum Capacitors (Standard) |
ROHM |
| 171 |
TCM0J336M8R |
Tantalum Capacitors (Bottom surface electrode : Large capacitance) |
ROHM |
| 172 |
TCSM0J336M8R |
Tantalum Capacitors (Bottom surface electrode : Extra large capacitance) |
ROHM |
| 173 |
TCTOP0J336M8R |
Conductive Polymer Capacitors (Bottom surface electrode : Large capacitance) |
ROHM |
| 174 |
TCTP0J336M8R |
Tantalum Capacitors (Bottom surface electrode : Large capacitance) |
ROHM |
| 175 |
TCTPL0J336M8R |
Tantalum Capacitors (Bottom surface electrode : Large capacitance) |
ROHM |
| 176 |
TCTU0J335M8R |
Chip Tantalum Capacitors (Bottom Surface Electrode Type) |
ROHM |
| 177 |
TESVSP0J335M8R |
Resign molded chip ultra miniaturized |
NEC |
| 178 |
TK50J30D |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 179 |
TP3410J304 |
ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver |
National Semiconductor |
| 180 |
TP3410J304-X |
ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver |
National Semiconductor |
| | | |
