No. |
Part Name |
Description |
Manufacturer |
151 |
2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
152 |
2SC4710LS |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
153 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
154 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
155 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
156 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
157 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
158 |
2SCR341Q |
NPN 100mA 400V Middle Power Transistor |
ROHM |
159 |
2SCR341QTR |
NPN 100mA 400V Middle Power Transistor |
ROHM |
160 |
2SCR346P |
NPN 100mA 400V Middle Power Transistor |
ROHM |
161 |
2SCR346PT100 |
NPN 100mA 400V Middle Power Transistor |
ROHM |
162 |
2SCR372P5 |
NPN 120V 700mA Medium Power Driver |
ROHM |
163 |
2SCR372P5T100 |
NPN 120V 700mA Medium Power Driver |
ROHM |
164 |
2SCR514P5 |
NPN 80V 700mA Medium Power Transistor |
ROHM |
165 |
2SCR514P5T100 |
NPN 80V 700mA Medium Power Transistor |
ROHM |
166 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
167 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
168 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
169 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
170 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
171 |
302 |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
172 |
302B |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
173 |
302C |
QUAD 2 INPUT BUFFER Collector 60mA capability |
Amelco Semiconductor |
174 |
3LN01C |
N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CP |
ON Semiconductor |
175 |
3LN01S |
N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single SMCP |
ON Semiconductor |
176 |
3LP01M |
P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP |
ON Semiconductor |
177 |
420E212 |
12V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
178 |
420E225 |
25V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
179 |
420E228 |
28V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
180 |
420E236 |
36V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
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