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Datasheets for 0MA

Datasheets found :: 23362
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 2SC4636LS NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications SANYO
152 2SC4710LS NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications SANYO
153 2SC5210 500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. Isahaya Electronics Corporation
154 2SC5383 125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. Isahaya Electronics Corporation
155 2SC5384 125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. Isahaya Electronics Corporation
156 2SC5477 150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification Isahaya Electronics Corporation
157 2SC6046 200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. Isahaya Electronics Corporation
158 2SCR341Q NPN 100mA 400V Middle Power Transistor ROHM
159 2SCR341QTR NPN 100mA 400V Middle Power Transistor ROHM
160 2SCR346P NPN 100mA 400V Middle Power Transistor ROHM
161 2SCR346PT100 NPN 100mA 400V Middle Power Transistor ROHM
162 2SCR372P5 NPN 120V 700mA Medium Power Driver ROHM
163 2SCR372P5T100 NPN 120V 700mA Medium Power Driver ROHM
164 2SCR514P5 NPN 80V 700mA Medium Power Transistor ROHM
165 2SCR514P5T100 NPN 80V 700mA Medium Power Transistor ROHM
166 2SJ125 150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. Isahaya Electronics Corporation
167 2SJ498 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. Isahaya Electronics Corporation
168 2SK2880 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. Isahaya Electronics Corporation
169 2SK433 150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. Isahaya Electronics Corporation
170 2SK492 150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. Isahaya Electronics Corporation
171 302 QUAD 2 INPUT BUFFER Collector 60mA capability Amelco Semiconductor
172 302B QUAD 2 INPUT BUFFER Collector 60mA capability Amelco Semiconductor
173 302C QUAD 2 INPUT BUFFER Collector 60mA capability Amelco Semiconductor
174 3LN01C N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CP ON Semiconductor
175 3LN01S N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single SMCP ON Semiconductor
176 3LP01M P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP ON Semiconductor
177 420E212 12V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops Protek Devices
178 420E225 25V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops Protek Devices
179 420E228 28V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops Protek Devices
180 420E236 36V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops Protek Devices


Datasheets found :: 23362
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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