No. |
Part Name |
Description |
Manufacturer |
151 |
G5131-41-T13UF |
PSM Step-up DC/DC Converter |
Global Mixed-mode Technology |
152 |
G5131-41-T14U |
PSM Step-up DC/DC Converter |
Global Mixed-mode Technology |
153 |
G5131-41-T14UF |
PSM Step-up DC/DC Converter |
Global Mixed-mode Technology |
154 |
G5131-41-T15U |
PSM Step-up DC/DC Converter |
Global Mixed-mode Technology |
155 |
G5131-41-T15UF |
PSM Step-up DC/DC Converter |
Global Mixed-mode Technology |
156 |
G9SA-321-T15 |
Sicherheitsmodul |
etc |
157 |
HEDM-6141-T10 |
Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules |
Agilent (Hewlett-Packard) |
158 |
M1-T1 |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
Won-Top Electronics |
159 |
NE3210S01-T1 |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
NEC |
160 |
NE3210S01-T1B |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
NEC |
161 |
NE325S01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
162 |
NE325S01-T1B |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
163 |
NE334S01-T1 |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
164 |
NE334S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
165 |
NE4210M01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
166 |
NE4210S01-T1 |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
167 |
NE4210S01-T1B |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
168 |
NE425S01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
169 |
NE425S01-T1B |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
170 |
NE429M01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
171 |
NE434S01-T1 |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
172 |
NE434S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NEC |
173 |
NE696M01-T1 |
NPN silicon high frequency transistor. |
NEC |
174 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
175 |
NE699M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
176 |
NE721S01-T1 |
GENERAL PURPOSE L TO X-BAND GaAs MESFET |
NEC |
177 |
NE721S01-T1B |
GENERAL PURPOSE L TO X-BAND GaAs MESFET |
NEC |
178 |
NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET |
NEC |
179 |
NE722S01-T1B |
L to X band N-channel GaAs MESFET. |
NEC |
180 |
NE722S01-T1B1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET |
NEC |
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