| No. |
Part Name |
Description |
Manufacturer |
| 151 |
CA3100T |
Wideband Operational Amplifier |
RCA Solid State |
| 152 |
CM100TF-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 153 |
CM100TF-12H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 154 |
CM100TF-12H |
Six-IGBT IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 155 |
CM100TF-24 |
HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 156 |
CM100TF-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 157 |
CM100TF-24H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 158 |
CM100TF-24H |
Six-IGBT IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 159 |
CM100TF-28H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 160 |
CM100TF-28H |
IGBT Modules:1400V |
Mitsubishi Electric Corporation |
| 161 |
CM100TF-28H |
Six-IGBT IGBTMOD 100 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 162 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 163 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 164 |
CM100TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 165 |
CM100TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 166 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 167 |
CM100TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 168 |
CM100TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 169 |
CM100TU-12H |
Six IGBTMOD 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 170 |
CM100TU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 171 |
CM100TU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 172 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 173 |
CM100TU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 174 |
CM100TU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 175 |
CM100TU-24H |
Six IGBTMOD 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 176 |
CMCPCI100T |
3 to 5.5 V, compact PCI backplane interface/termination IC |
California Micro Devices Corp |
| 177 |
CXG1100TN |
High Power DPDT Switch with Logic Control |
SONY |
| 178 |
CXK5T16100TM |
-65536-word x 16-bit High Speed CMOS Static RAM |
SONY |
| 179 |
CXK5T16100TM |
65536-word x 16-bit High Speed CMOS Static RAM |
SONY |
| 180 |
CXK5T16100TM-12LLX |
65536-word x 16-bit High Speed CMOS Static RAM |
SONY |
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