No. |
Part Name |
Description |
Manufacturer |
151 |
ISPLSI1016E-125LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
152 |
ISPLSI1016E-80LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
153 |
ISPLSI1016E-80LJI |
In-System Programmable High Density PLD |
Lattice Semiconductor |
154 |
ISPLSI1016E-80LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
155 |
ISPLSI1016E-80LT44I |
In-System Programmable High Density PLD |
Lattice Semiconductor |
156 |
ISPLSI1016EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
157 |
ISPLSI1016EA-100LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
158 |
ISPLSI1016EA-100LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
159 |
ISPLSI1016EA-125LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
160 |
ISPLSI1016EA-125LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
161 |
ISPLSI1016EA-200LJ44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
162 |
ISPLSI1016EA-200LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
163 |
JAN2N1016B |
NPN Transistor |
Microsemi |
164 |
JAN2N1016C |
NPN Transistor |
Microsemi |
165 |
K6F1016U4C-EF55 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
166 |
K6F1016U4C-EF70 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
167 |
K6R1016C1 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
168 |
K6R1016C1C |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
169 |
K6R1016C1C-C10 |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
170 |
K6R1016C1C-C12 |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
171 |
K6R1016C1C-C15 |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
172 |
K6R1016C1C-I10 |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
173 |
K6R1016C1C-I12 |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
174 |
K6R1016C1C-I15 |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
175 |
K6R1016C1D |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Data Sheet |
Samsung Electronic |
176 |
K6R1016C1D-EC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
177 |
K6R1016C1D-EI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
178 |
K6R1016C1D-JC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
179 |
K6R1016C1D-JI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
180 |
K6R1016C1D-KC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
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