| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 152 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 153 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 154 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 155 |
2N1920 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 156 |
2N1921 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 157 |
2N1922 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 158 |
2N1975 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 159 |
2N1983 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 160 |
2N1984 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 161 |
2N1985 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 162 |
2N1986 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 163 |
2N1987 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 164 |
2N1988 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 165 |
2N1989 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 166 |
2N2023 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 167 |
2N2024 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 168 |
2N2025 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 169 |
2N2026 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 170 |
2N2027 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 171 |
2N2028 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 172 |
2N2029 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 173 |
2N2030 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 174 |
2N2212 |
10A PNP Alloy-Diffused Epitaxial Germanium Power Transistor |
Motorola |
| 175 |
2N2288 |
10A PNP ADE Germanium power transistor |
Motorola |
| 176 |
2N2289 |
10A PNP ADE Germanium power transistor |
Motorola |
| 177 |
2N2290 |
10A PNP ADE Germanium power transistor |
Motorola |
| 178 |
2N2291 |
10A PNP ADE Germanium power transistor |
Motorola |
| 179 |
2N2292 |
10A PNP ADE Germanium power transistor |
Motorola |
| 180 |
2N2293 |
10A PNP ADE Germanium power transistor |
Motorola |
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