| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 152 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 153 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 154 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 155 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 156 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 157 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 158 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 159 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 160 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 161 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 162 |
2N1905 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 163 |
2N1906 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 164 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 165 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 166 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 167 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 168 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 169 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 170 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 171 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 172 |
2N1920 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 173 |
2N1921 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 174 |
2N1922 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 175 |
2N1975 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 176 |
2N1983 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 177 |
2N1984 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 178 |
2N1985 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 179 |
2N1986 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
| 180 |
2N1987 |
Trans GP BJT NPN 100V 10A 3-Pin TO-61 |
New Jersey Semiconductor |
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