| No. |
Part Name |
Description |
Manufacturer |
| 151 |
AT17LV128A-10NC |
FPGA Configuration EEPROM Memory |
Atmel |
| 152 |
AT17LV128A-10NI |
FPGA Configuration EEPROM Memory |
Atmel |
| 153 |
AT17LV256-10NC |
FPGA Configuration EEPROM Memory |
Atmel |
| 154 |
AT17LV256-10NI |
FPGA Configuration EEPROM Memory |
Atmel |
| 155 |
AT17LV256A-10NC |
FPGA Configuration EEPROM Memory |
Atmel |
| 156 |
AT17LV256A-10NI |
FPGA Configuration EEPROM Memory |
Atmel |
| 157 |
AT17LV512-10NC |
FPGA Configuration EEPROM Memory |
Atmel |
| 158 |
AT17LV512-10NI |
FPGA Configuration EEPROM Memory |
Atmel |
| 159 |
AT17LV512A-10NC |
FPGA Configuration EEPROM Memory |
Atmel |
| 160 |
AT17LV512A-10NI |
FPGA Configuration EEPROM Memory |
Atmel |
| 161 |
AT17LV65-10NC |
FPGA Configuration EEPROM Memory |
Atmel |
| 162 |
AT17LV65-10NI |
FPGA Configuration EEPROM Memory |
Atmel |
| 163 |
AT17LV65A-10NC |
FPGA Configuration EEPROM Memory |
Atmel |
| 164 |
AT17LV65A-10NI |
FPGA Configuration EEPROM Memory |
Atmel |
| 165 |
AT17N256-10NC |
FPGA Configuration Memory |
Atmel |
| 166 |
AT17N256-10NI |
FPGA Configuration Memory |
Atmel |
| 167 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 168 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 169 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 170 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 171 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 172 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 173 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 174 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 175 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 176 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 177 |
ATF22V10B-10NM/883 |
High- Performance EE PLD |
Atmel |
| 178 |
BA3310N |
MONOLITAIC ICs |
ROHM |
| 179 |
BD9110NV |
4.5-5.5V 2A 1ch Buck converter |
ROHM |
| 180 |
BD9110NV-E2 |
4.5-5.5V 2A 1ch Buck converter |
ROHM |
| | | |
