No. |
Part Name |
Description |
Manufacturer |
151 |
NMC27C010Q150 |
150 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
152 |
NMC27C010Q17 |
170 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
153 |
NMC27C010Q170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
154 |
NMC27C010Q20 |
200 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
155 |
NMC27C010Q200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
156 |
NMC27C010Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
157 |
NMC27C010Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
158 |
NMC27C010QE170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
159 |
NMC27C010QE200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
160 |
NMC27C010QE250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
161 |
NMC27C010QM170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
162 |
NMC27C010QM200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
163 |
NMC27C010QM250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
164 |
PACDN010QR |
P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR |
California Micro Devices Corp |
165 |
PACDN010QT |
P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR |
California Micro Devices Corp |
166 |
PALCE20V8-10QC |
Flash Erasable/ Reprogrammable CMOS PAL Device |
Cypress |
167 |
PALCE22V10Q-10JC/5 |
24-Pin EE CMOS (Zero Power) Versatile PAL Device |
Lattice Semiconductor |
168 |
PALCE22V10Q-10PC/5 |
24-Pin EE CMOS (Zero Power) Versatile PAL Device |
Lattice Semiconductor |
169 |
PALCE22V10Q-15JC/5 |
24-Pin EE CMOS (Zero Power) Versatile PAL Device |
Lattice Semiconductor |
170 |
PALCE22V10Q-15PC/5 |
24-Pin EE CMOS (Zero Power) Versatile PAL Device |
Lattice Semiconductor |
171 |
PALCE22V10Q-25JC/4 |
24-Pin EE CMOS (Zero Power) Versatile PAL Device |
Lattice Semiconductor |
172 |
PALCE22V10Q-25PC/4 |
24-Pin EE CMOS (Zero Power) Versatile PAL Device |
Lattice Semiconductor |
173 |
PDM34078SA10Q |
3.3V 32K x 32 fast CMOS synchronous static RAM with burst counter and output register |
PARADIGM |
174 |
PDM34078SA10QA |
3.3V 32K x 32 fast CMOS synchronous static RAM with burst counter and output register |
PARADIGM |
175 |
PDM34078SA10QATR |
3.3V 32K x 32 fast CMOS synchronous static RAM with burst counter and output register |
PARADIGM |
176 |
PDM34078SA10QATY |
3.3V 32K x 32 fast CMOS synchronous static RAM with burst counter and output register |
PARADIGM |
177 |
PDM34078SA10QI |
3.3V 32K x 32 fast CMOS synchronous static RAM with burst counter and output register |
PARADIGM |
178 |
PDM34078SA10QITR |
3.3V 32K x 32 fast CMOS synchronous static RAM with burst counter and output register |
PARADIGM |
179 |
PDM34078SA10QITY |
3.3V 32K x 32 fast CMOS synchronous static RAM with burst counter and output register |
PARADIGM |
180 |
PDM34078SA10QTR |
3.3V 32K x 32 fast CMOS synchronous static RAM with burst counter and output register |
PARADIGM |
| | | |