| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NJG1106KB2-L2 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
| 152 |
NJG1106KB2-L3 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
| 153 |
NJG1106KB2-L4 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
| 154 |
NJW1106 |
DOLBY PRO LOGIC SURROUND DECODER |
New Japan Radio |
| 155 |
NJW1106FC2 |
DOLBY PRO LOGIC SURROUND DECODER |
New Japan Radio |
| 156 |
NJW1106FC2-80 |
DOLBY PRO LOGIC SURROUND DECODER |
New Japan Radio |
| 157 |
PMMAD1106 |
Steering diode (rail clamp) array |
Protek Devices |
| 158 |
PWR1106 |
1.5 WATT UNREGULATED DUAL-IN-LINE DC/DC CONVERTER |
C&D Technologies |
| 159 |
Q62702-D1106 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
| 160 |
Q62702-D1106 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
| 161 |
R5110610 |
General Purpose Rectifier (100-150 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 162 |
R5110610XXWA |
600V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 163 |
R5110615 |
General Purpose Rectifier (100-150 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 164 |
R5110615XXWA |
600V, 150A general purpose single diode |
Powerex Power Semiconductors |
| 165 |
R6110620 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 166 |
R6110625 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 167 |
R6110625XXYZ |
600V, 250A general purpose single diode |
Powerex Power Semiconductors |
| 168 |
R6110630 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 169 |
R6110630XXYZ |
600V, 300A general purpose single diode |
Powerex Power Semiconductors |
| 170 |
RN1106 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 171 |
RN1106ACT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 172 |
RN1106CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 173 |
RN1106F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 174 |
RN1106FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 175 |
RN1106MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 176 |
RSZ-1106 |
ECONOLINE - DC/DC - CONVERTER |
Recom International Power |
| 177 |
SD1106AD |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 178 |
SD1106CHP |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 179 |
SD1106DD |
60 V, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 180 |
SHF1106 |
600 V, 1 A hyper fast recovery rectifier |
Solid State Devices Inc |
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